CETC - Ion Implanter

• High current (H/C), long service life Al ion source
• High-energy, isocratic electrostatic accelerator for high-energy ion implantation
• Two-way scanning system with deflection angle and angle calibration for wide ion beam and parallelized ion beam implantation
• Real-time monitoring for implanting temperature with thermocouple wafer temperature detecting system
• Online uniformity detecting and real-time calibration ensuring the uniformity and accuracy of implantation dose
• Automatic wafer loading with high efficiency and high performance
• Wafer size: 4~6 inch
• Implanting elements: Al, B, P, N
• Maximum implanting energy: up to 700 keV
• Ion beam: Al⁺/1000μA; Al⁺⁺/200μA; B⁺/1200μA; P⁺/1500μA; N⁺/500μA
• Uniformity: 1σ≤1%
• Repeatability: 1σ≤1%
• Implanting Temperature: 500°C
• Applications: SiC and GaAs devices

Specialized Ion Implanter

• Solid-state metal ion source
• Pre-analysis/post-acceleration design
• Two-way electrical scanning with horizontal deflection angle of 7°
• Multistation target with liquid nitrogen cooling and tube heating functionalities
• Manual wafer loading and unloading optional
• Reliable safety interlock
• Computer controlled
• Automatic processing
• Reliable, longtime ion implantation
• Real-time implantation dose monitoring
• Applicable for diversified implanting elements
• Wide range of implanting temperature with multiple options from low temperature (liquid nitrogen) to high temperature
• Implanting elements: Non-metal: H⁺, B⁺, P⁺, N⁺, O⁺, Ar⁺, He⁺, Si⁺ etc.; Metal: Ni⁺, Zr⁺, Mo⁺, Fe⁺, Au⁺ etc.
• Implanting energy: 10~300 keV
• Uniformity: 1σ≤3%
• Implanting Temperature: max 600°C
• Applications: Research in materials science and engineering (material property changing, etc.)

Medium Current (M/C) Ion Implanter

• High current (H/C), long service life indirect-heating ion source
• Parallelized ion beams
• Plasma flood system equipped
• Pre-analysis/post-acceleration double-magnet design
• Single wafer electrostatic-adherent target station
• Robotic arm transfer in vacuum environment
• Two-way scanning system with deflection angle and angle calibration for wide ion beam and parallelized ion beam implantation
• Online uniformity detecting and real-time calibration ensuring the uniformity and accuracy of implantation dose
• Service life of ion source: ≥300h
• Implanting energy: 5~900 keV
• Deflection angle of ion implantation: 0°~60°, ≤±0.25°
• Adjusting range of rotating target disc: 0°~360°, ≤±0.25°
• Deviation of ion beam parallelization: ±0.2°
• Mode of implantation: Single wafer implantation
• Uniformity: 1σ≤0.5%
• Repeatability: 1σ≤0.5%
• Wafer size: 4~8 inch
• Applications: Doping implantation for 4~8 inch discrete semiconductor devices and 0.1~0.16μm IC manufacturing lines