Semicorex - Model SiC - Coated Barrel Susceptor for LPE Epitaxial Growth
From Silicon Carbide Coated - China Barrel Susceptor
Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
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Our SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-quality and reliable product that provides excellent value for money. Its high-temperature oxidation resistance, even thermal profile, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its low maintenance requirements and customizability make it a highly competitive product in the market.
Contact us today to learn more about our SiC Coated Barrel Susceptor for LPE Epitaxial Growth.
Features
- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.
